technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com n-channel mosfet qualified per mil-prf-19500/557 t4-lds-0149 rev. 1 (092063) page 1 of 4 devices levels 2N6802 2N6802u jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain ? source voltage v ds 500 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 2.5 adc continuous drain current t c = +100c i d2 1.5 adc max. power dissipation p tl 25 (1) w drain to source on state resistance r ds(on) 1.5 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 0.2 w/c for t c > +25c (2) v gs = 10vdc, i d = 1.5a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit off charactertics drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss 500 vdc gate-source voltage (threshold) v ds v gs , i d = 0.25ma v ds v gs , i d = 0.25ma, t j = +125c v ds v gs , i d = 0.25ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = 400v v gs = 0v, v ds = 400v, t j = +125c i dss1 i dss2 25 0.25 adc madc static drain-source on-state resistance v gs = 10v, i d = 1.5a pulsed v gs = 10v, i d = 2.5a pulsed t j = +125c v gs = 10v, i d = 1.5a pulsed r ds(on)1 r ds(on)2 r ds(on)3 1.50 1.60 3.50 diode forward voltage v gs = 0v, i d = 2.5a pulsed v sd 1.4 vdc to-205af (formerly to-39) u ? 18 lcc
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com n-channel mosfet qualified per mil-prf-19500/557 t4-lds-0149 rev. 1 (092063) page 2 of 4 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = 10v, i d = 2.5a v ds = 250v q g(on) q gs q gd 33.00 4.46 28.11 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = 2.5a, v gs = 10vdc, gate drive impedance = 7.5 , v dd = 225vdc t d(on) t r t d(off) t f 30 30 55 30 ns diode reverse recovery time di/dt 100a/s, v dd 50v, i f = 2.5a t rr 900 ns
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com n-channel mosfet qualified per mil-prf-19500/557 t4-lds-0149 rev. 1 (092063) page 3 of 4 package dimensions dimensions ltr inches millimeters notes min max min max cd .305 .355 7.75 9.02 ch .160 .180 4.07 4.57 hd .335 .370 8.51 9.39 h .009 .041 0.23 1.04 j .028 .034 0.72 0.86 2 k .029 .045 0.74 1.14 3 ld .016 .021 0.41 0.53 7, 8 ll .500 .750 12.7 19.05 7, 8 ls .200 tp 5.08 tp 6 lu .016 .019 0.41 0.48 7, 8 l1 .050 1.27 7, 8 l2 .250 6.35 7, 8 p .070 1.78 5 q .050 1.27 4 r .010 0.25 9 45 tp 45 tp 6 notes: 1 dimensions are in inches. millimeters are given for general information only. 2 beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). 3 dimension k measured from maximum hd. 4 outline in this zone is not controlled. 5 dimension cd shall not vary more than .010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. 6 lu applies between l1 and l2. ld applies between l2 and l minimum. diameter is uncontrolled in l1 and beyond ll minimum. 7 all three leads. 8 radius (r) applies to both inside corners of tab. 9 drain is electrically connected to the case. 10 in accordance with asme y14.5m , diameters are equivalent to x symbology. * figure 1. physical dimensions for to-205af .
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com n-channel mosfet qualified per mil-prf-19500/557 t4-lds-0149 rev. 1 (092063) page 4 of 4 dimensions ltr inches millimeters min max min max bl .345 .360 8.77 bw .280 .295 7.11 ch .095 .115 2.41 ll1 .040 .055 1.02 ll2 .055 .065 1.40 ls .050 bsc 1.27 bsc ls1 .025 bsc 0.635 bsc ls2 .008 bsc 0.203 bsc lw .020 .030 0.51 0.76 q1 .105 ref 2.67 ref q2 .120 ref 3.05 ref q3 .045 .055 1.14 1.40 tl .070 .080 1.78 2.03 tw .120 .130 3.05 3.30 notes: 1 dimensions are in inches. 2 millimeters are given for general information only. 3 in accordance with asme y14.5m, diameters are equivalent to x symbology. 4 ceramic package only. * figure 2. physical dimensions for lcc .
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